skiip 2003gb171-4dw ? by semikron 25.01.01 09:41 b 7 - 27 i. power section 4 * skiip 503gb171ct per phase absolute maximum ratings symbol conditions 1) values units igbt v ces 1700 v v cc operating dc link voltage 1200 v v ges 20 v i c t heat sink = 25 (70) c 2000 ( 1500 ) a inverse diode i f t heat sink = 25 (70) c 2000 ( 1500 ) a i fsm t j = 150 c, t p = 10ms; sin 17280 a i 2 t (diode) diode, t j = 150 c, 10ms 1493 ka 2 s t j , (t stg ) -40...+150 (125) c v isol ac, 1min. 4000 v i c-package t heat sink = 70c, t term 3) =115c 4 * 500 a characteristics symbol conditions 1) min. typ. max. units igbt v cesat 5) i c = 1200 a, t j = 25 (125)c - 2,7 ( 3,1 ) 3,2 v v ceo v ge = 15v; t j = 25 (125) c - 1,5 ( 1,6 ) 1,7 ( 1,8 ) v r ce v ge = 15v; t j = 25 (125) c - 1,1 ( 1,4 ) 1,3 ( 1,7 ) m w i c = 1200 a vcc= 900 v - 1200 - mj e on + e off 4) t j =125c vcc= 1200 v - 1769 - mj i ces v ge =0,v ce =v ces ,t j =25(125) c - 4,8 ( 288 ) - ma l ce top, bottom - 3 - nh r cc-ee resistance, terminal-chip - 0,10 - m w inverse diode v f 5) = v ec i f = 1200 a; t j = 25(125) c - 2,0 ( 1,8 ) 2,3 v v to t j = 25 (125) c - 1,5 ( 1,2 ) 1,7 ( 1,4 ) v r t t j = 25 (125) c - 0,5 ( 0,6 ) 0,6 ( 0,7 ) m w i c = 1200 a vcc= 900 v - 144 - mj e rr 4) t j =125c vcc= 1200 v - 211 - mj thermal characteristics r thjs per igbt - - 0,014 c/w r thjs per diode - - 0,028 c/w r thsa 2) w: nwk 40; 8l/min; 50%glyc. - - 0,008 c/w current sensor i p rms t a =100 c , v supply = 15v 4 * 400 a i pmax rms t 2 s, t a =100 c 4 * 500 a mechanical data m1 dc terminals, si units 4 - 6 nm m2 ac terminals, si units 8 - 10 nm skiip a a 3 sk integrated intelligent power pack 2-pack skiip 2003gb171-4dw 2) target data housing s43 features skiip technology inside - pressure contact of ceramic to heat sink; low thermal impedance - pressure contact of main electric terminals - pressure contact of auxiliary electric terminals - increased thermal cycling capability - low stray inductance - homogenous current distribution cal diode technology integrated current sensor integrated temperature sensor high power density 1) t heatsink = 25 c, unless otherwise specified 2) d integrated gate driver u with dc-bus voltage measurement (option for gb) l mounted on standard heat sink for forced air cooling w mounted on standard liquid cooled heat sink 3) t term = temperature of terminal 4) with skiip 3 gate driver 5) measured at chip level 8) external parallelin g necessary this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee, expressed or implied is made regarding delivery, performance or suitability.
skiip 2003gb171-4dw b 7 - 28 25.01.01 09:41 ? by semikron
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